Method of manufacturing vibrating micromechanical structures

ABSTRACT

A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

PRIORITY CLAIM

This patent application claims priority from copending U.S. patentapplication Ser. No. 11/084,978 filed Mar. 21, 2005, and entitled,“Method of Manufacturing Vibrating Micromechanical Structures,” thecontents of which are hereby incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to methods of fabricating micromechanicalresonators using Silicon-on-insulator (SOI) wafers, and in particular tomethods of fabricating micromechanical resonators using single crystalsilicon wafer material.

As disclosed by Yoon, et al. in U.S. Pat. No. 6,490,147, “High-QMicromechanical Device and Method of Tuning Same,” Dec. 3, 2002, whichis incorporated herein by reference, and also by Nguyen, et al. in U.S.Pat. No. 6,249,073, “Device Including a Micromechanical Resonator Havingan Operating Frequency and Method of Extending Same,” Jun. 19, 2001,which is incorporated herein by reference, vibrating micromechanicalresonators formed of polycrystalline silicon, commonly known aspolysilicon, are well-known as miniaturized substitutes for crystals ina variety of high-Q oscillator and filtering applications. State of theart micromechanical resonator fabrication techniques utilizepolycrystalline silicon for manufacturing micromechanical resonatorsdevices produced by means of silicon sacrificial surface micromachining.

This state of the art method of manufacturing using sacrificial surfacemicromachining produces polysilicon resonators or other thin filmresonators having intrinsic stresses, stress gradients, or both, thateffect device performance. These intrinsic stresses and stress gradientsare difficult to control during manufacturing. Yet, control of theseintrinsic stresses and stress gradients is critical for devices for usein applications that require high repeatability and reproducibility.

This state of the art method of manufacturing using polysilicon alsorequires removal of a sacrificial layer of material using wet etchingtechniques that complicate the manufacturing process and generallyresults in low yield due to difficulty in removing sacrificial materialin the small gap between the resonator and the lower electrode. Thismethod of manufacturing using polycrystalline silicon also results instiction, which further lowers yields.

For devices requiring very small capacitive air gaps, e.g., tocompensate for manufacturing tolerances or for tuning or for use astunable resonator cum filter, the removal of sacrificial layer becomesextremely difficult as liquid or even vapor etching techniques cannoteasily penetrate underneath the resonators to create a free standingstructures. The removal of etched sacrificial material to form thecapacitive gap is a process as well as operation yield limiter for smallair gaps on the order of 300 Angstrom or smaller.

Additionally, impurities present in polysilicon thin films degradedevice performance and also result in lower resonator Q.

FIGS. 1 and 2 present conceptual and perspective view schematics,respectively, of a tunable capacitor 10 as taught by Yoon, et. al. inU.S. Pat. No. 6,490,147. The capacitor 10 has a bottom capacitor plate12 fixed to a substrate 14, and a top capacitor plate 16 suspended abovethe bottom plate 12. The top capacitor plate 16 is also anchored to thesubstrate 14. Both plates 12 and 16 are constructed of copper (Cu) tominimize their total series resistance in an attempt to maximize thedevice quality factor, Q.

A dielectric slab 18 is suspended between the two plates 12 and 16 andanchored to the substrate 14 outside the two plates 12 and 16 via springstructures 20. This dielectric 18 is free to move by electrostaticdisplacement to alter either the overlap between it and the capacitorplates 12 and 16, or the fringing fields between them. In the formercase, when a DC bias is applied between the two plates 12 and 16, thecharges on the capacitor plates 12 and 16 exert an electrostatic forceon the induced charges in the dielectric 18 to pull the dielectric 18into the gap between the plates 12 and 16, as shown in FIG. 1. The“waffle” shape of the capacitor 10 shown in FIG. 2 is intended tominimize the travel distance, or the needed voltage, required for agiven change in capacitance, and to provide etchant access paths duringa step in the fabrication process for removing a thin sacrificial layerby etching.

FIGS. 3A-3E are side sectional views which illustrate one state of theart fabrication process for producing micromechanical resonators of thetype depicted by the capacitor 10. The prior art process, as taught byYoon, et. al. in U.S. Pat. No. 6,490,147, begins in FIG. 3A with thethermal growth of a 1 micron layer 30 of SiO.sub.2 to serve as anisolation or dielectric layer between the eventual metal structures anda silicon wafer or substrate 32. Next, the bottom capacitor plate 12 isformed by first evaporating 300 Angstroms/2000 Angstroms a Cr/Cu seedlayer 34, then electroplating a 5 micron layer 36 of copper (Cu). A 3000Angstrom layer 38 of nickel (Ni) is then electroplated above the Culayer 36 to serve as a buffer layer to prevent Cu contamination of etchchambers during subsequent reactive ion etch (RIE) processes.

FIG. 3B illustrates a first 2000 Angstrom aluminum (Al) sacrificiallayer 40 is evaporated and patterned to form vias through which asubsequent layer PECVD nitride dielectric film 42 adheres to theunderlying Ni layer 38. The nitride film 42 is patterned via RIE to formthe movable dielectric plate 18, then submerged under 0.9 micron of asecond sacrificial Al film 44 that defines the spacing between thedielectric plate 18 and the eventual top metal plate 16, as shown inFIG. 3C. Due to the valley-like topography between the fingers of theetched dielectric, the deposition of the 0.9 micron layer 44 of Alactually results in only a 0.3 micron gap between the top plate 16 andthe dielectric 18 when the two are engaged.

After etching vias through the Al layer 44 to define top plate anchors(shown in FIG. 3C), as shown in FIG. 3D, the top plate 16 is formed byfirst evaporating a thin Cr/Cu seed layer 46, then electroplating a Culayer 48 through a defining photoresist mold 50 to a thicknesssufficient to insure that the top plate 16 does not bend under appliedactuation voltages. The PR and seed layer under the PR are removed. Thetwo Al sacrificial layers 40 and 44 are selectively etched to releasethe dielectric 42 using a K.sub.3Fe(CN).sub.6/NaOH solution, whichattacks Al, but leaves Cu and the nitride dielectric 42 intact, yieldingthe final cross-section shown in FIG. 3E. After release, sublimation ora critical point dryer is often used to dry the capacitor 10 in anattempt to prevent stiction.

Additionally, cleaning and removal of the sacrificial layer is extremelydifficult for small gaps, and often requires use of a surfactant.

FIG. 4 illustrates a perspective view schematic of a free-free beam,flexural-mode, micromechanical device or resonator 52 and an electricalpick off scheme, as taught by Nguyen, et al. in U.S. Pat. No. 6,249,073.The device 52 includes a free-free micromechanical flexural resonatorbeam 54 supported at its flexural nodal points 56 by four torsionalbeams 58, each anchored to a substrate 59 by rigid contact anchors 60. Adrive electrode 62 underneath the free-free resonator beam 54 allowselectrostatic excitation via an applied AC voltage Vi, and outputcurrents are detected directly off a DC-biased (via V.sub.P) resonatorstructure 64. The torsional support beams 58 are designed withquarter-wavelength dimensions, which effect an impedance transformationthat isolates the free-free resonator beam 54 from the rigid anchors 60.Ideally, the free-free resonator beam 54 sees zero-impedance into itssupports or beams 58, and thus, effectively operates as if levitatedwithout any supports. As a result, anchor dissipation mechanismsnormally found in previous clamped-clamped beam resonators are greatlysuppressed, allowing much higher device Q. However, multiple driveelectrodes may be utilized for push-pull excitation. The electrodes canalso be used for sensing, frequency tuning and detection of the output.

Typically, a transducer capacitor gap spacing is entirely determined viaa sacrificial surface micromachining process for removing a thinsacrificial oxide layer, and wet etching of the sacrificial layer forfinal release of the flexural resonator beam 54 to create the capacitorgap.

FIGS. 5A and 5B illustrate a transducer capacitor gap spacing, as taughtby Nguyen, et al. in U.S. Pat. No. 6,249,073, that is not entirelydetermined via a thin sacrificial oxide, as was done (with difficulty)in previous clamped-clamped beam high frequency devices. Rather, astaught by Nguyen, et al., the capacitor gap 66 is determined by theheight of spacers or dimples 68 set by a timed etch. The height of thedimples 68 is such that when a sufficiently large DC-bias V.sub.P isapplied between the drive electrode 62 and the resonator beam 54, thewhole structure comes down and rests upon the dimples 68, which arelocated at the flexural nodal points 56. The spacers 68 are formedeither on the resonator beam 54 or on the substrate 59.

As taught by Nguyen, et al. in U.S. Pat. No. 6,249,073, the use ofdimples to set the capacitor gap spacings 66 is intended to permit muchthicker sacrificial oxide spacers to be used, thereby alleviatingprevious problems due to pinholes and non-uniformity in ultra-thinsacrificial layers used when transducer capacitor gap spacing isentirely determined by sacrificial surface micromachining for removingthe thin sacrificial oxide. Also, the thicker sacrificial oxide isintended to be easier to remove than previous thinner ones, which isintended to decrease the required HF release etch time and lessen theprobability that etching by-products remain in the gap 66 where theymight interfere with resonator operation and Q.

FIGS. 6A, 6B and 6C illustrate one state of the art fabrication methodfor producing micromechanical resonators as taught by Nguyen, et al. inU.S. Pat. No. 6,249,073, wherein the device 52 is fabricated using afive-mask, polycrystalline silicon or “polysilicon,”surface-micromachining technology described by the process flow shown inU.S. Pat. No. 6,249,073. The fabrication sequence taught by Nguyen, etal. begins with isolation layers 70 and 72 formed via successive growthand deposition of 2 micron thermal oxide and 2000 Angstrom LPCVDSi.sub.3N.sub.4, respectively, over a <100> lightly-doped p-typestarting silicon wafer 74. Next, 3000 Angstroms of LPCVD polysilicon isdeposited at 585 degrees C. and phosphorous-doped via implantation, thenpatterned to form the ground planes 64 and interconnects. An LPCVDsacrificial oxide layer 78 is then deposited to a mathematicallydetermined thickness, after which successive masking steps producedimple and anchor openings 80, 82. The dimple openings 82 are definedvia a reactive-ion etch which must be precisely controlled. Anchorsopenings 80 are simply wet-etched in a solution of buffered hydrofluoricacid (BHF).

Next, in FIG. 6B, structural polysilicon is deposited via LPCVD at 585degrees C., and phosphorous dopants are introduced via ion-implantationto provide the flexural resonator beam 54. A 2000 Angstrom-thick oxidemask is then deposited via LPCVD at 900 degrees C., after which thewafers must be annealed for one hour at 1000 degrees C. in an effort torelieve stress and distribute dopants.

As illustrated in FIG. 6C, wet etching of the sacrificial layer is usedfor final release of the flexural resonator beam 54 to create thecapacitor gap 66. Both the oxide mask and structural layer are patternedvia SF.sub.6/O.sub.2 and Cl.sub.2-based RIE etches, respectively. Thestructures 54 and 58 are then released via a 5 minute etch in 48.8 wt. %HF. As taught by Nguyen, et al. in U.S. Pat. No. 6,249,073, this 5minute release etch time is significantly shorter than that required forprevious clamped-clamped beam resonators, which is about 1 hour, becausethey did not benefit from the dimple-activated gap spacings, as taughtby Nguyen, et al. The previous clamped-clamped beam resonators requiresacrificial oxide thicknesses on the order of hundreds of Angstroms.After structural release by wet etching of the sacrificial layer,aluminum is evaporated and patterned over polysilicon interconnects vialift-off to reduce series resistance.

Thus, state of the art methods of manufacturing using polycrystallinesilicon produces resonators having intrinsic stresses, stress gradients,or both, that effect device performance. These state of the art methodsof manufacturing using polycrystalline silicon also require removal of asacrificial layer of material using wet etching techniques thatcomplicate the manufacturing process and generally results in low yielddue to difficulty in removing sacrificial material in the small gapbetween the resonator and the lower electrode. This method ofmanufacturing using polycrystalline silicon also results in stiction,which further lowers yields, and impurities present in polysilicon thinfilms degrade device performance and result in lower resonator Q.

Thus, an improved device and method of manufacturing are desirable.

SUMMARY OF THE INVENTION

A method for fabrication of single crystal silicon (SCS) micromechanicalresonators using a two-wafer process, including a Silicon-on-Insulator(SOI) or an insulating base wafer and a SOI resonator wafer, whereinresonator anchors, a capacitive air gap, isolation trenches,transmission lines, and alignment marks are micromachined in a singlecrystal silicon semiconductor material active layer of the base SOIwafer. When practiced using an insulating wafer, such as glass, Pyrex,quartz, or oxided silicon, alignment marks, capacitive air gap,transmission lines, and resonator anchors are fabricated on theinsulating wafer using a combination of bulk and surface micromachiningand metal deposition and etching. The single crystal siliconsemiconductor material active layer of the resonator wafer is bondeddirectly to the active layer of the base wafer using wafer flat foralignment. The handle and dielectric layers of the resonator wafer areremoved. According to one aspect of the invention, viewing windows areopened in the active layer of the resonator wafer to access alignmentmarks in the active layer of base wafer. Alternatively, alignment isaccomplished using a conventional double sided aligner. The SCSsemiconductor material active layer of the resonator wafer is maskedwith photoresist material; and a single crystal silicon resonator isfabricated in the single crystal silicon semiconductor material activelayer of the resonator wafer using silicon dry etch micromachiningtechnology, such as reactive ion etching (RIE) or deep reactive ionetching (DRIE). The photoresist material is subsequently removed by drystripping.

According to one aspect of the invention, alignment for bonding thesingle crystal silicon (SCS) semiconductor material active layer of theresonator wafer with base wafer is accomplished using only wafer flatalignment of the two or more stacked wafers.

According to another aspect of the invention, alignment for bonding thesingle crystal silicon (SCS) semiconductor material active layer of theresonator wafer with the base wafer is accomplished using double sidedaligner.

According to another aspect of the invention, the resonator beamanchors, capacitive air gap, transmission lines, isolation trenches, andalignment marks are machined in the active layer of the base SOI waferfurther using a conventional photolithography masking and dry etchingmicromachining method.

According to yet another aspect of the invention, the resonator beamanchors, capacitive air gap, transmission lines, isolation trenches, andalignment marks are machined on an insulating substrate, such as Pyrex,glass, quartz, oxidized silicon, or nitride, using etching of theinsulating layer and metal deposition to create these features.

According to another aspect of the invention, the two wafers are bondedby 10 fusion bonding, anodic bonding or frit bonding methods.

According to another aspect of the invention, silicon dry etch machiningthe single crystal silicon resonator beam in the single crystal siliconsemiconductor material active layer of the resonator wafer produces asingle crystal silicon clamped-clamped resonator beam.

According to another aspect of the invention, silicon dry etch machiningthe single crystal silicon resonator beam in the single crystal siliconsemiconductor material active layer of the resonator wafer produces asingle crystal silicon clamped-free resonator beam.

According to another aspect of the invention, silicon dry etch machiningthe single crystal silicon resonator beam in the single crystal siliconsemiconductor material active layer of the resonator wafer produces asingle crystal silicon free-free resonator beam.

According to another aspect of the invention, silicon dry etch machiningthe single crystal silicon resonator beam in the single crystal siliconsemiconductor material active layer of the resonator wafer produces asingle crystal silicon membrane or disk.

According to another aspect of the invention, the single crystal siliconclamped-clamped resonator beam is an interconnected dual resonator thatis structured to form a filter device.

According to one aspect of the invention, the single crystal siliconwafer mechanical resonator is structured as a clamped-clampedinterconnected dual beam resonator for operation as filter.

According to one aspect of the invention, the single crystal siliconwafer mechanical resonator is structured as a clamped-freeinterconnected dual beam resonator for operation as filter.

According to one aspect of the invention, the single crystal siliconwafer mechanical resonator is structured as a free-free interconnecteddual beam resonator for operation as filter.

According to one aspect of the invention, the single crystal siliconwafer mechanical resonator is structured as a one disk or multidiskinterconnected resonator for operation as filter.

According to other aspects of the invention, an improved micromechanicalresonator structured of single crystal silicon wafer material isprovided using the method of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and many of the attendant advantages of thisinvention will become more readily appreciated as the same becomesbetter understood by reference to the following detailed description,when taken in conjunction with the accompanying drawings, wherein:

FIGS. 1 and 2 present conceptual and perspective view schematics,respectively, of a state of the art tunable capacitor as taught by Yoon,et al. in U.S. Pat. No. 6,490,147;

FIGS. 3A-3E are side sectional views which illustrate one state of theart fabrication process of the prior art used for the capacitorillustrated in FIGS. 1 and 2, as taught Yoon, et al. in U.S. Pat. No.6,490,147;

FIG. 4 illustrates a perspective view schematic of a state of the artfree-free beam, flexural-mode, micromechanical device or resonator andan electrical pick off scheme, as taught by Nguyen, et al. in U.S. Pat.No. 6,249,073;

FIGS. 5A and 5B illustrate a state of the art transducer capacitor gapspacing, as taught by Nguyen, et al. in U.S. Pat. No. 6,249,073;

FIGS. 6A, 6B and 6C illustrate one state of the art fabrication methodusing a five-mask, polysilicon, surface-micromachining technologydescribed by the process flow, as taught by Nguyen, et al. in U.S. Pat.No. 6,249,073;

FIG. 7 is a cross-sectional view that illustrates the architecture of amicromechanical resonator device of the present invention formed of twobonded Silicon-on-insulator (SOI) wafer elements;

FIG. 8 is a cross-sectional view of a SOI base wafer element having aburied dielectric layer sandwiched between relatively thickersemiconductor material handle and thinner active layers;

FIG. 9 is a cross-sectional view of a SOI base plate of the presentinvention and illustrates a capacitive air gap being formed in theactive layer of the SOI base wafer element;

FIG. 10 is another cross-sectional view of the SOI base plate of thepresent invention and illustrates micromachining of the active layer ofsemiconductor material of the SOI base wafer element whereby mechanismfeatures are formed;

FIG. 11 is a side view of the SOI base plate of the present inventionwith a SOI resonator wafer element emplaced;

FIG. 12 is a cross-sectional view of the micromechanical resonatordevice of the present invention having the SOI resonator wafer elementbeing machined to develop the micromechanical silicon resonator andsupplemental operational features as may be required; and

FIG. 13 is a plan view of a portion of one device of the presentinvention having a single crystal silicon resonator embodied as aclamped-clamped dual beam resonator having first and second singlecrystal silicon resonator beams connected with a coupling beam to form afilter device.

DETAILED DESCRIPTION OF THE INVENTION

In the Figures, like numerals indicate like elements.

The present invention is an apparatus and method for fabrication ofmicromechanical resonators using a two-wafer process, including aSilicon-on-Insulator (SOI) base wafer and a SOI resonator wafer, oralternatively an insulating base wafer and a single crystal silicon(SCS) or SOI resonator wafer.

FIG. 7 is a cross-sectional view that illustrates the architecture of amicromechanical resonator device 100 of the present invention formed ofa SOI base plate 102 formed in a SOI base wafer 104 and a single crystalsilicon micromechanical resonator 106 formed in a SOI resonator wafer108 (shown in subsequent Figures and described below). The SOI base andresonator wafers are a type that is generally commercially available.The SOI base wafer element 104 includes a buried dielectric layer 110having a typical thickness of from about 0.5 to 2.0 microns that issandwiched between relatively thicker “handle” and “active” layers 112,114 both of single crystal silicon (SCS) semiconductor material.

The resonator 106 is positioned above a capacitive air gap 116 in whichthe resonator 106 moves out of plane. The single crystal siliconresonator 106 is direct or fusion bonded at either end 118, 120 directlyto single crystal silicon anchors 122, 124 formed in the active layer114 of the base wafer 104, whereby it is coupled to the base plate 102at both ends to provide a resonator of the clamped-clamped type. As wasknown in the prior art, such clamped-clamped type resonators achieveboth small mass and high stiffness with relative ease. This is paramountfor communications-grade resonators, since stiffness directly influencesthe dynamic range of circuits utilizing such resonators.

According to one embodiment of the invention, when the base wafer 104 isa SOI wafer, the resonator 106 is direct or fusion bonded to the SCSanchors 122, 124. Alternatively, the resonator 106 is frit bonded to theSCS anchors 122, 124 of the SOI base wafer 104.

According to another embodiment of the invention, when the base wafer104 is an insulating substrate of the type described herein, theresonator 106 is anodic or frit bonded to the anchors 122, 124.

Single crystal silicon (SCS) semiconductor material for resonator 106 isa superior structural material for microresonators compared topolycrystalline films such as polysilicon and others due to lowerinternal friction and consequently higher mechanical Q, lower internalstress and an independence from various process parameters exhibited bySCS semiconductor material.

FIG. 8 is a cross-sectional view of the SOI base wafer 104 having theburied dielectric layer 110 sandwiched between relatively thicker SCSsemiconductor material handle and active layers 112, 114 whereof the SOIbase plate 102 is formed.

FIG. 9 is a cross-sectional view of the SOI base plate 102 andillustrates the alignment marks 132 created by photolithography andetching of SCS active layer 114. The alignment marks 132 are used forreference alignments on active layer 114, and for later alignment of theSOI resonator wafer 108. A capacitive air gap 116 is also formed in theactive layer 114 of the SOI base wafer 104. This forming the capacitiveair gap 116 in the active layer 114 is in direct contrast to prior artclamped-clamped, clamped-free, and free-free beam high frequency deviceswherein the transducer capacitor gap spacing was determined by removalof a thin sacrificial layer. The active layer 114 is machined using, byexample and without limitation, conventional photolithography maskingand wet etching technology. Alternatively, the active layer 114 ismachined using dry etching processes, such as either RIE (Reactive IonEtch) or DRIE (Deep Reactive Ion Etch) processes. Such processesinclude, for example, the deep trench dry silicon etching processescommercially known as “BOSCH” and “ALCATEL” RIE and DRIE processes bothobtain substantially vertical sidewalls of the etched features withoutconcern for the crystallographic orientation of the etched substrate,whereby a more compact MEMS device results, which in turn enables moredevices to be fabricated per wafer to produce a significant costadvantage.

By example and without limitation, the active layer 114 is machinedusing a silicon nitride deposition over which a photolithographicpattern is formed using photoresist masking material, followed byetching of the silicon nitride and stripping of the photoresist tocreate a silicon nitride mask over the active layer 114 with trenchesforming the mask pattern. Silicon oxide is grown via thermal oxidationin the trenches. A silicon oxide/silicon nitride etch is performed tocreate the air gap 116 as a recess of very precise depth in the baseplate active layer 114. The precision of the recess that forms the airgap 116 is more precise than using photoresist as sacrificial material.As contrasted with prior art wet etching methods, the method of thepresent invention is able to provide precise and very small capacitorair gaps 116 because the spacing is controlled by oxidation only, ratherthan wet etching of a photoresist. The depth of the air gap 116 is afunction of design and performance parameters that are particular to theapplication. Precisely recessed air gaps 116 in the order of fewAngstroms can be achieved using this technique. According to oneembodiment of the present invention, the thermal oxidation andsubsequent etching is used to create a recess of about 300 .ANG. in thebase plate active layer 114.

FIG. 10 is another cross-sectional view of the SOI base plate 102 andillustrates micromachining of the active layer 114 of semiconductormaterial of the SOI base wafer element 104, whereby mechanism featuresare formed. For example, the resonator anchors 122, 124 are formed forsupporting the resonator 106 relative to the air gap 116, andtransmission lines 126 are also formed in a pattern structured tocooperate with the resonator 106. One or more isolation trenches 128,130 are formed that reach to the buried dielectric layer 110 forelectrically isolating the different anchors 122, 124 and RFtransmission lines 126 of the mechanism features. The anchors 122, 124,transmission lines 126, and isolation trenches 128, 130 are formed bypatterning of these features using photoresist mask material patternedby photolithography, which is followed by a silicon etch, such as RIE orDRIE, stopping at the buried oxide dielectric layer 110 in the SOI basewafer 104. The photoresist mask material is then removed and theresulting SOI base plate 102 is cleaned.

FIG. 11 is a side view of the SOI base wafer 104 fusion bonded with theSOI resonator wafer 108 and placed. The SOI resonator wafer element 108includes a buried dielectric layer 140 having a thickness of from about0.4 or thinner to about 2.0 microns that is sandwiched betweenrelatively thicker “active” and “handle” layers 142, 144 both ofsemiconductor material.

In an as yet unpatterned state, the SOI resonator wafer 108 is flippedvertically and, having the active layer 142 facing the active layer 114of the SOI base wafer 104 having the resonator anchor features 122, 124separated by the capacitive air gap feature 116, the RF transmissionline features 126, isolation trench features 128, 130 and alignmentmarks feature 132. The unpatterned and flipped SOI resonator wafer 108is flat aligned with the SOI base wafer 104 using major or minor flatsof both wafers. The SOI resonator wafer 108 requires flat alignment onlybecause it is as yet unpatterned so that the precision alignmentrequired of prior art methods is not necessary.

FIG. 12 is a cross-sectional view of the micromechanical resonatordevice 100 of the present invention having the SOI resonator wafer 108micromachined to develop the micromechanical silicon resonator 106 andsupplemental operational features as may be required. The handle layer144 and internal oxide dielectric layer 140 are stripped from the activelayer 142 of the SOI resonator wafer element 108. According to oneembodiment of the invention, using photolithography and silicon etching,one or more windows 148 are etched to open access to alignment marks 132on active layer 114 of base wafer 104. The windows 148 are larger thanthe alignment marks 132 and in alignment therewith. The alignment marks132 are used for subsequent photolithography alignment steps for SOIresonator wafer active layer 142.

While alignment windows result in better alignment accuracy, alignmentis optionally accomplish by another method. Alternatively, for example,alignment marks 132′ are formed in the backside 149 of the SOI basewafer 102 and used for front to back alignment. Next steps includephosphorous doping of the active layer 142 at selected locations of oneor more contact pads 150, which is followed by conventional metaldeposition for depositing a metal, such as gold and aluminum, to createcontact pads 150 and metal, such as gold or aluminum, deposition onbackside of base wafer 104 for grounding.

Using the viewing windows 148 to align relative to the alignment marks132 on the SOI resonator wafer element 108, or another alignment method,the active layer 142 is patterned with photoresist masking material byphotolithography. Accordingly, the requirement in prior art methods fora precise fusion bond alignment is eliminated. The active layer 142 issilicon dry etched using either RIE or DRIE machining to define thesingle crystal silicon resonator 106 in the active layer 142. Thus, incontrast to prior art methods of releasing the resonator, the presentinvention does not require a wet etch release because a sacrificiallayer is not being removed to release the silicon resonator 106 of theinvention. The photoresist masking material is dry stripped, whereuponthe micromechanical resonator device 100 is free.

When joined by fusion or direct bonding, the interface 146 couples thesingle crystal silicon resonator 106 to the single crystal siliconanchor features 122, 124 of the SOI base plate 102. Thus, according toany embodiment of the invention, the resonator 106 is formed of singlecrystal silicon. Accordingly, several advantages over the prior art arerealized by the invention. The device resonator 106 is a single crystalsilicon. As contrasted with the polysilicon resonators of the prior art,the single crystal resonator 106 results in higher Q and has none of theimpurities present in polycrystalline silicon or “polysilicon” thinfilms or other material thin films to degrade device performance. Theuse of single crystal silicon for the resonator 106 also eliminates boththe intrinsic stresses and the stress gradients that effect performanceof prior art devices based upon polycrystalline silicon resonators,which is a critical attribute for devices used in applications thatrequire high repeatability and reproducibility. The dry etch release ofthe resonator 106 and complementary dry stripping of the photoresistmasking material eliminate the prior art methods of sacrificial surfacewet etch micromachining that complicate the prior art manufacturingprocess and generally results in low yield because of the difficulty inremoving the sacrificial material in the small gap between the resonatorand the lower electrode and results in stiction or adhesion, whichfurther lowers yields. Rather, in contrast to the prior art methods,forming the capacitive air gap 116 in the active layer 114 of the basewafer 104 results in precise depth control and very small capacitor airgaps 116. Micromachining of the resonator 106 with the active layer 142of the flipped SOI resonator wafer 108 in place on the base plate 102eliminates the precise fusion bond alignment necessary, and replaces itwith the simpler flat alignment only visually through the viewingwindows 148.

According to embodiments of the invention wherein the base wafer 104 isa single crystal silicon SOI wafer, which results in single crystalsilicon anchors 122, 124 that are more rigid than anchors known in theprior art. When joined by fusion bonding, the interface 146 couples theresonator 106 into a single crystal silicon with the anchor features122, 124 of the SOI base plate 102. Thus, according to this fusionbonded embodiment of the invention, the resonator 106 and anchors 122,124 are joined in an integrated unit formed of uniform single crystalsilicon. Accordingly, additional advantages over the prior art arerealized by this fusion bonded embodiment of the invention. The deviceresonator 106 is integral with the supporting anchors 122, 124 so thatthe interface stresses of the prior art devices arising from materialand thermal expansion coefficient differences are eliminated. Thus, ascontrasted with the polysilicon resonator beams of the prior art, theintegral single crystal resonator 106 and supporting anchors 122, 124 ofthe present invention eliminates the thermal gradients and intrinsicstresses at the interface of the polycrystalline silicon resonator andthe underlying silicon support anchors that occur in prior art devicesand degrade device performance.

FIG. 13 is a plan view of a portion of one exemplary device 100 of thepresent invention having a single crystal silicon resonator 106 embodiedas a clamped-clamped dual beam resonator having first and second singlecrystal silicon resonator beams 152, 154 connected with a coupling beam156 to form a filter device. According to the method of the presentinvention, the first and second resonator beams 152, 154 are coupled tothe single crystal silicon support anchors 122, 124 of the SOI baseplate 102 by either fusion, anodic or eutectic bonding, whereby thedevice 100 is able to simultaneously achieve high-Q and high stiffness,which is paramount for communications-grade resonators.

Alternatively, the single crystal silicon resonator 106 is embodied as asingle crystal silicon clamped-free resonator beam, a free-freeresonator beam, or a single crystal silicon membrane or disk.

According to one embodiment of the present invention, theclamped-clamped resonator 106 is an interconnected dual resonator thatis structured for operation as a filter device.

According to a different embodiment of the present invention, the singlecrystal silicon wafer mechanical resonator 106 is structured as aclamped-free interconnected dual beam resonator that is structured foroperation as a filter device.

Alternatively, the single crystal silicon wafer mechanical resonator 106is structured as a free-free interconnected dual beam resonator that isstructured for operation as a filter device.

Alternatively, the single crystal silicon wafer mechanical resonator 106is structured as a single disk or multidisk interconnected resonatorthat is structured for operation as a filter device.

According to different embodiments of the present invention, the activelayer 142 of the SOI resonator wafer 108 is fusion bonded to the activelayer 114 of the SOI base wafer element 104 into a single substrate thatis micromachined to produce the resonator 106, by example and withoutlimitation the first and second single crystal silicon resonator beams152, 154, which are integral with the single crystal silicon supportanchors 122, 124 of the SOI base plate 102. The resulting device 100provides all the advantages over the prior art of a single crystalsilicon resonator, and also provides the added advantages inherent informing the resonator beams 152, 154 and support anchors 122, 124 of asingle integrated substrate.

According to different embodiments of the present invention, the basewafer 104 is an insulating wafer-type substrate, wherein the air gap 116and alignment marks 132, 132′ are etched via bulk micro aching using wetand/or dry etching techniques in the insulating substrate. Transmissionlines are formed using metal deposition in etched cavities on thesubstrate, for example, via E-beam metal deposition or sputtering. Theglass or insulating wafer-type substrate is optionally bonded to thebeam SOI wafer 108 using anodic or frit bonding. Such embodiments alsoresult in the resonator 106 being of single crystal silicon, whereby theadvantages discussed herein are realized.

While the preferred embodiment of the invention has been illustrated anddescribed, it will be appreciated that various changes can be madetherein without departing from the spirit and scope of the invention.

1. A method forming a vibrating micromechanical structure, the methodcomprising: micromachining one or more resonator structure anchors, acapacitive air gap, one or more isolation trenches, and one or morealignment marks in a single crystal silicon semiconductor materialactive layer of a first Silicon-On-Insulator wafer having a dielectriclayer between a semiconductor material handle layer and thesemiconductor material active layer; fusion bonding a single crystalsilicon semiconductor material active layer of a secondSilicon-On-Insulator wafer directly to the active layer of the firstSilicon-On-Insulator wafer, the second Silicon-On-Insulator wafer havinga dielectric oxide layer between a semiconductor material handle layerand the semiconductor material active layer; removing the handle anddielectric oxide layers of the second Silicon-On-Insulator wafer;etching one or more windows in the active layer of the secondSilicon-On-Insulator wafer; and silicon dry etch micromachining a singlecrystal silicon resonator structure in the single crystal siliconsemiconductor material active layer of the second Silicon-On-Insulatorwafer.
 2. The method of claim 1 wherein silicon dry etch micromachininga single crystal silicon resonator structure in the single crystalsilicon semiconductor material active layer of the secondSilicon-On-Insulator wafer further comprises aligning a mask relative tothe one or more alignment marks in the active layer of the firstSilicon-On-Insulator wafer.
 3. The method of claim 1 wherein silicon dryetch micromachining a single crystal silicon resonator structure in thesingle crystal silicon semiconductor material active layer of the secondSilicon-On-Insulator wafer further comprises micromachining the singlecrystal silicon resonator structure using one of reactive ion etchingand deep reactive ion etching.
 4. The method of claim 3 whereinmicromachining the single crystal silicon resonator structure furthercomprises initially masking the single crystal silicon semiconductormaterial active layer of the second Silicon-On-Insulator wafer withphotoresist material and subsequently dry stripping the photoresistmaterial.
 5. The method of claim 1 wherein micromachining one or moreresonator structure anchors, a capacitive air gap, one or more isolationtrenches, and one or more alignment marks in a single crystal siliconsemiconductor material active layer of a first Silicon-On-Insulatorwafer further comprises micromachining using a conventionalphotolithography masking and wet etching micromachining method.
 6. Themethod of claim 1 wherein silicon dry etch machining a single crystalsilicon resonator structure in the single crystal silicon semiconductormaterial active layer of the second Silicon-On-Insulator wafer furthercomprises machining a single crystal silicon resonator structured as oneof a clamped-clamped resonator beam, a clamped-free resonator beam, afree-free resonator beam, a single crystal silicon membrane, and asingle crystal silicon disk.
 7. The method of claim 6, furthercomprising micromachining one or more RF transmission lines in theactive layer of the first Silicon-On-Insulator wafer; and whereinmachining a single crystal silicon resonator structure further comprisesmachining a single crystal silicon resonator structure that isstructured to form a filter device.